SVD3205STR中文资料士兰微数据手册PDF规格书

DESCRIPTION

SVD3205T/F/S is an N-channel enhancement mode power MOS field

effect transistor which is produced using Silan proprietary flat

low-voltage structure VDMOS technology. The improved process and

cell structure have been especially tailored to minimize on-state

resistance, provide superior switching performance, and withstand

high energy pulse in the avalanche and commutation mode.

It can be widely used in electronic ballast, low-power SWPS.

FEATURES

 110A, 55V, RDS(on)(typ.)=7.5m@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability