丝印：SVD3205F；Package：TO-220F-3L；110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件：248.07 Kbytes 页数：8 Pages

SILAN

士兰微

110A、55VN沟道增强型场效应管

SVD3205T/F/S N沟道增强型功率MOS场效应晶体管采用士兰微电子平面低压VDMOS 工艺技术制造。先进的工艺及元胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于电子镇流器，低功率开关电源。\n\n • 110A，55V，RDS(on)（典型值）=7.5mW@VGS=10V\n• 低反向传输电容\n• 提升了dv/dt 能力;

Silan

士兰微

110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件：248.07 Kbytes 页数：8 Pages

SILAN

士兰微

110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件：248.07 Kbytes 页数：8 Pages

SILAN

士兰微

N-Channel 60 V (D-S) MOSFET

文件：999.08 Kbytes 页数：7 Pages

VBSEMI

微碧半导体