isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：352.63 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive,

文件：368.64 Kbytes 页数：2 Pages

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无锡固电

N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to e

文件：342.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：12NK80Z；Package：TO-247；N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Features ■ Extremely high dv/dt capability ■ Improved esd capability ■ 100 avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing reliability Applications ■ Switching applications Description These devices are N-channel Zener-protected Pow

文件：695.11 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.88Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：334.88 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.41Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.77 Kbytes 页数：2 Pages

ISC

无锡固电

Worldwide best FOM

文件：812.65 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Ultra low gate charge

文件：760.02 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：12N170K5；Package：TO-247；N-channel 1700 V, 2.3 廓 typ., 5 A, MDmesh??K5 Power MOSFET in a TO??47 package

文件：485.91 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?줚I MOSFET

文件：250.34 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体