N沟道1500 V、1.6 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-247封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) *area \n• Industry’s best figure of merit (FoM) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Ultra low gate charge

文件：760.02 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

ST
TO-247

ST

上传：深圳市恒星亚创科技有限公司

ST/意法
TO-247

ST/意法

上传：深圳庞田科技有限公司

ST/意法
TO-3P

ST/意法

上传：深圳庞田科技有限公司