N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 1700V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.9Ω(Max)@VGS= 10V APPLICATIONS · Switching

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ISC

无锡固电

丝印：12N170K5；Package：TO-247；N-channel 1700 V, 2.3 廓 typ., 5 A, MDmesh??K5 Power MOSFET in a TO??47 package

文件：485.91 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N沟道1700 V、2.3 Ohm典型值、5 A MDmesh K5功率MOSFET，TO-247封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• Zener-protected;

ST

意法半导体

ST
TO-247

ST

上传：深圳市恒星亚创科技有限公司

ST/意法
TO-247

ST/意法

上传：深圳庞田科技有限公司