N-channel 650 V @Tjmax, 0.53 廓, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH??Power MOSFET

文件：841.76 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 0.65廓 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET

文件：522.929 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

文件：267.99 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 950V - 0.69廓 - 10A - TO-247 Zener - Protected SuperMESH??PowerMOSFET

文件：312.69 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.35廓 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

文件：591.63 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Current-Relay STW12V Current-Detection, OR-Evaluation, 12 Inputs, adjustable

文件：266.02 Kbytes 页数：1 Pages

ZIEHL

N沟道1200 V、0.62 Ohm典型值、12 A MDmesh K5功率MOSFET，TO-247封装

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Worldwide best FOM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N沟道1500 V、1.6 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-247封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) *area \n• Industry’s best figure of merit (FoM) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

连接器外壳

JAMICON

凯美