Current-Relay STW12 AC-Detection, 12-channel, Single evaluation, OR-Circuit

文件：356.8 Kbytes 页数：1 Pages

ZIEHL

N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

文件：946.25 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

文件：376.56 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=110A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.28 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Super Junction MOSFET Transistor

FEATURES · Drain Current -ID=12A@ TC=25℃ · Drain Source Voltage -VDSS=1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.62Ω(TYP)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：309.87 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5A@ TC=25℃ ·Drain Source Voltage -VDSS= 1700V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：328.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 1700V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.9Ω(Max)@VGS= 10V APPLICATIONS · Switching

文件：346.92 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=11.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：350.8 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：147 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.91 Kbytes 页数：2 Pages

ISC

无锡固电