N-Channel MOSFET uses advanced trench technology

文件：887.03 Kbytes 页数：4 Pages

DOINGTER

杜因特

Mosfets

Samhop

三合微科

NAND Gates

General Description The 325 and 326 each contain two 2-input gates and two 3-input gates. The active pullup and 5mA output drive current of the 325 allow it to drive moderately long lines with no loss of noise immunity. The 326 has passive pullup resistors on the chip, so that outputs may be coll

文件：853.02 Kbytes 页数：3 Pages

MICROSEMI

美高森美

HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C

DESCRIPTION The VB326SP is a high voltage power integrated circuit made using the STMicroelectronics VIPower™ M1-3 technology, with vertical current flow power darlington and logic level compatible driving circuit. The enable pin allows to externally block the switch when the input is on. Bu

文件：193.19 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C

DESCRIPTION The VB326SP is a high voltage power integrated circuit made using the STMicroelectronics VIPower™ M1-3 technology, with vertical current flow power darlington and logic level compatible driving circuit. The enable pin allows to externally block the switch when the input is on. Bu

文件：193.19 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体