High avalanche ruggedness

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STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N-channel 30 V, 0.006 Ohm, 13 A, SO-8 STripFET(TM) V Power MOSFET

This product is an N-channel Power MOSFET that utilizes the 5th generation of design rules for ST’s proprietary STripFET™ technology. The lowest available RDS(on)* Qg, in SO-8 package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be a R\nDS(on)* Q\ngindustry benchmark\nExtremely low on-resistance R\nDS(on)\nVery low switching gate charge\nHigh avalanche ruggedness\nLow gate drive power losses;

ST

意法半导体

SOP8

ST

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SOIC-8

ST

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