N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：603.84 Kbytes 页数：7 Pages

SAMHOP

三合微科

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：623.5 Kbytes 页数：7 Pages

SAMHOP

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：500.49 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：25G3L；Package：SO-8；N-channel 30 V, 0.0025 Ω, 22 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’

文件：257.26 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 30V - 0.0032 ohm - 25A SO-8 STripFET??III MOSFET FOR DC-DC CONVERSION

Description This device utilizes the advanced design rules of STs proprietary STripFET™ technology. The innovative process coupled with unique metallization techniques makes it possible to produce the most advanced low voltage Power MOSFET in an SO-8 package. The device is therefore suitable for

文件：290.34 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.71 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

文件：163.39 Kbytes 页数：7 Pages

SAMHOP

三合微科

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：760.47 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

文件：619.45 Kbytes 页数：7 Pages

SAMHOP

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Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 20V 2.5A 80 @ VGS=4.5V 110 @ VGS=2.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -20V -2A 130 @ VGS=-4.5V 190 @ VGS=-2.5V

文件：926.05 Kbytes 页数：11 Pages

SAMHOP

三合微科