STS10100S-RM-AR

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS Highfrequencyswitch powersupply Freewheelingdiodes, polarityprotection applications FEATURES Commoncathodestructure Lowpowerloss,highefficiency HighOperatingJunction Temperature TrenchMOSSchottkytechnology， Highreliability RoHSproduct

STS10100S-RM-AR

Marking：STS10100S；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS Lowvoltage,high frequencyrectifier Freewheelingdiodes, polarityprotection applications FEATURES Lowpowerloss,highefficiency HighOperatingJunction Temperature Guardringforovervoltage protection，Highreliability RoHSproduct

STS10100S-XG-A

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS Lowvoltage,high frequencyrectifier Freewheelingdiodes, polarityprotection applications FEATURES Lowpowerloss,highefficiency HighOperatingJunction Temperature Guardringforovervoltage protection，Highreliability RoHSproduct

STS10100S-XG-AR

Marking：STS10100S；Package：SMP-1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS Lowvoltage,high frequencyrectifier Freewheelingdiodes, polarityprotection applications FEATURES Lowpowerloss,highefficiency HighOperatingJunction Temperature Guardringforovervoltage protection，Highreliability RoHSproduct

STS10NF30L

N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem

STS10P4LLF6

Marking：10K4L；Package：SO-8；P-channel 40 V, 0.0125 廓 typ., 10 A, StripFET??F6 Power MOSFET in SO-8 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™F6technology withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness 

STS10PF30L

P-CHANNEL 30V - 0.012Ohm - 10A SO-8 STripFET II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance. GeneralFeatures ■TYPICALRDS(on)=0.012Ω ■STANDARDOUTLINEFOREASYAUTOMATEDSU

STS11NF30L

N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

STS11NF3LL

N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

DESCRIPTION ThisapplicationspecificPowerMosfetisthethirdgenerationofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsthebesttrade-offbetweenon-resistanceandgatecharge.Whenusedashighandlowsideinbuckregulators,itgives

STS126

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN