丝印：10K4L；Package：SO-8；P-channel 40 V, 0.0125 廓 typ., 10 A, StripFET??F6 Power MOSFET in SO-8 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness 

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STMICROELECTRONICS

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