| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STS | Ultraminiature Tactile Switch | BournsBourns Inc. 伯恩斯（邦士） | Bourns | |
STS | Wire Marker type-On sheets | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | |
STS | Surface Mount Process Sealed Tactile | CITCIT CIT | CIT | |
STS | 包装：盒 类别：电缆，电线 - 管理 标记物 描述：WIRE MARKER 19.1MM X 35.6MM WHT | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | |
THERMOSTAT SWITCH >Thumbwheelsettingdial >Smallhysteresis >Highswitchingcapacity >Antifrostassurance >Optimizedhousingforbetterairflow | STEGOSTEGO STEGO | STEGO | ||
DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR DESCRIPTION TheSTS01DTP06isaHybriddualNPN-PNPcomplementarypowerbipolartransistormanufacturedbyusingthelatestlowvoltageplanartechnology.TheSTS01DTP06ishousedindualislandSO-8packagewithseparatedterminalsforhigherassemblyflexibility,specificallyrecommendedtobe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Multifunction Telecommunications Switch DESCRIPTION TheSTS100combinestwo1FormAsolidstaterelaysandoneoptocouplerina16-pinSOICpackage.ItssmalloutlineandlowheightmakeitidealforuseinPCMCIAapplicationswheremulti-functiondeviceshelpreducecostandboardspace. FEATURES •Lowinputcontrolcurrent •Func | SSOUSASolid State Optronic Solid State Optronic | SSOUSA | ||
N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
P-channel 40 V, 0.0125 廓 typ., 10 A, StripFET??F6 Power MOSFET in SO-8 package Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™F6technology withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
P-CHANNEL 30V - 0.012Ohm - 10A SO-8 STripFET II POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance. GeneralFeatures ■TYPICALRDS(on)=0.012Ω ■STANDARDOUTLINEFOREASYAUTOMATEDSU | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET DESCRIPTION ThisapplicationspecificPowerMosfetisthethirdgenerationofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsthebesttrade-offbetweenon-resistanceandgatecharge.Whenusedashighandlowsideinbuckregulators,itgives | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Super high dense cell design for low RDS(ON). STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN | Samhop 三合微科 | Samhop | ||
N - CHANNEL 30V - 0.0085W - 12A SO-8 STripFET POWER MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL 30 V - 0.008 ??- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET??MOSFET DESCRIPTION TheSTS12NH3LLisbasedonthelatestgenerationofST’sproprietary“STripFET™”technology.Aninnovativelayoutenablesthedevicetoalsoexhibitextremelylowgatechargeforthemostdemandingrequirementsashigh-sideswitchinhighfrequencyDC-DCconverters.It’sthereforeidea | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.0045 ohm - 17A SO-8 STripFET??II MOSFET FOR DC-DC CONVERSION Description ThisapplicationspecificPowerMOSFETisthesecondgenerationofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsthebesttrade-offbetweenon-resistanceandgatecharge.SuchfeaturesmakeitthebestchoiceinhighefficiencyDC-DC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
DUAL N-CHANNEL 450V - 4.1ohm - 0.4A SO-8 SuperMESH??POWER MOSFET DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh?줚I MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™IIprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel E nhancement Mode Field EffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package. | Samhop 三合微科 | Samhop | ||
N-Channel E nhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package. | Samhop 三合微科 | Samhop |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_功率开关 （PSW）
- 封装形式：
直插封装
- 极限工作电压：
80V
- 最大电流允许值：
15A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
2
- 可代换的型号：
3DK109C,
- 最大耗散功率：
125W
- 放大倍数：
β=20-50
- 图片代号：
E-44
- vtest：
80
- htest：
999900
- atest：
15
- wtest：
125
产品属性
- 产品编号：
STS
- 制造商：
3M
- 类别：
电缆，电线 - 管理 > 标记物
- 系列：
STS
- 包装：
盒
- 类型：
导线标记
- 尺寸：
0.75" 宽 x 1.40" 长（19.1mm x 35.6mm）
- 电缆直径：
0.090" ~ 0.315"（2.29mm ~ 8.00mm）
- 图例：
空白
- 颜色：
白色
- 材料：
乙烯基
- 描述：
WIRE MARKER 19.1MM X 35.6MM WHT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BOURNS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ST |
2339+ |
SOP8 |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ST |
2022 |
SOP |
2300 |
原装现货,诚信经营! |
询价 | ||
ST/意法 |
22+ |
QFN16 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
ST |
500 |
SOP8 |
37 |
1911+ |
询价 | ||
STM |
2020+ |
SOP8 |
15308 |
公司主营品牌,全新原装现货超低价! |
询价 | ||
ST |
23+ |
SOP8 |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
ST/意法半导体 |
21+ |
8-SOIC |
63880 |
本公司只售原装 支持实单 |
询价 | ||
ST |
22+ |
24-TQFPN |
5000 |
全新原装,力挺实单 |
询价 | ||
SEMITEH |
23+ |
DFN10 |
31592 |
只做原装 欢迎咨询 |
询价 |
相关规格书
更多- STS103
- STS105
- STS107
- STS402
- STS409
- STS411
- STS423
- STS425
- STS431
- STS663
- STT1
- SU310
- SU312
- SU426V(A)
- SU509
- SU518
- SU520
- SVT200-05
- SVT200-20
- SVT250-10
- SVT300-05
- SVT300-20
- SVT350-5
- SVT400-5
- SVT450-5
- SVT7520
- SVT7522
- SVT7524
- SVT7573
- SWT1032
- SX3707
- SX3709
- SX3711
- SX4059
- SX4061
- T0605BH
- T0605MH
- T0609BH
- T0609MH
- T0610BH
- T0610DH
- T0610MH
- T0610NH
- T0812BH
- T0812DH
相关库存
更多- STS104
- STS106
- STS401
- STS403
- STS410
- STS413
- STS424
- STS430
- STS660
- STS665
- SU111
- SU311
- SU426(A)
- SU508
- SU510
- SU519
- SV7056
- SVT200-10
- SVT250-05
- SVT250-20
- SVT300-10
- SVT350-3
- SVT400-3
- SVT450-3
- SVT60-5
- SVT7521
- SVT7523
- SVT7525
- SVT80-5
- SWT1042
- SX3708
- SX3710
- SX4058
- SX4060
- SX4062
- T0605DH
- T0605NH
- T0609DH
- T0609NH
- T0610BJ
- T0610DJ
- T0610MJ
- T0610NJ
- T0812BJ
- T0812DJ
