Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

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N - CHANNEL 30V - 0.0085W - 12A SO-8 STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

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N-CHANNEL 30 V - 0.008 ??- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION The STS12NH3LL is based on the latest generation of ST’s proprietary “STripFET™” technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It’s therefore idea

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N-CHANNEL 30V - 0.0045 ohm - 17A SO-8 STripFET??II MOSFET FOR DC-DC CONVERSION

Description This application specific Power MOSFET is the second generation of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. Such features make it the best choice in high efficiency DC-DC

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DUAL N-CHANNEL 450V - 4.1ohm - 0.4A SO-8 SuperMESH??POWER MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

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N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh?줚I MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

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Low data-rate, low power sub-1GHz transmitter

Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz • Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK • Air data rate from 1 to 500 kbps • Very low power consumption (21 mA TX at +11 dBm) • Programmable channel spacing (12.5 kHz min.) • Programmable ou

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N-Channel E nhancement Mode Field EffectTransistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

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N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

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P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：593.16 Kbytes 页数：7 Pages

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