首页 >STS>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

STS2309A

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STS2320

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

Samhop

三合微科

STS2321

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

Samhop

三合微科

STS2321

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STS25N3LLH6

N-channel 30 V, 0.0025 Ω, 22 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness ■Lowgatedrivepowerlosses ■Verylowswitchinggatecharge Application ■Switchingapplications Description Thisproductutilizesthe6thgenerationofdesign rulesofST’

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STS25NH3LL

N-CHANNEL 30V - 0.0032 ohm - 25A SO-8 STripFET??III MOSFET FOR DC-DC CONVERSION

Description ThisdeviceutilizestheadvanceddesignrulesofSTsproprietarySTripFET™technology.TheinnovativeprocesscoupledwithuniquemetallizationtechniquesmakesitpossibletoproducethemostadvancedlowvoltagePowerMOSFETinanSO-8package.Thedeviceisthereforesuitablefor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STS2601

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-26package.

Samhop

三合微科

STS2601

P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STS2611

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-26package.

Samhop

三合微科

STS2611

P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STS2620

Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

PRODUCTSUMMARY(N-Channel) VDSSIDRDS(ON)(mΩ)Max 20V2.5A80@VGS=4.5V 110@VGS=2.5V PRODUCTSUMMARY(P-Channel) VDSSIDRDS(ON)(mΩ)Max -20V-2A130@VGS=-4.5V 190@VGS=-2.5V

Samhop

三合微科

STS2620

N- and P-Channel 20V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STS2620A

Dual Enhancement Mode Field Effect Transistor (N and P Channel )

PRODUCTSUMMARY(N-Channel) VDSSIDRDS(ON)(mΩ)Max 20V2.5A50@VGS=4.5V 76@VGS=2.5V PRODUCTSUMMARY(P-Channel) VDSSIDRDS(ON)(mΩ)Max -20V-2A106@VGS=-4.5V 198@VGS=-2.5V

Samhop

三合微科

STS2620A

N- and P-Channel 20V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STS2621

Dual P -Channel Enhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-26package.

Samhop

三合微科

STS2621

Dual P-Channel 20 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableApplications •BatterySwitchforPortableDevices •Computers -BusSwitch -LoadSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STS2622

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TSOP6package.

Samhop

三合微科

STS2622

Dual N-Channel Enhancement Mode MOSFET

Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)

WEITRONWEITRON

威堂電子科技

STS2622A

Super high dense cell design for low RDS(ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SufaceMountPackage.

Samhop

三合微科

STS2622A

Dual N-Channel 20 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

晶体管资料

  • 型号:

    STS103

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率开关 (PSW)

  • 封装形式:

    直插封装

  • 极限工作电压:

    80V

  • 最大电流允许值:

    15A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    2

  • 可代换的型号:

    3DK109C,

  • 最大耗散功率:

    125W

  • 放大倍数:

    β=20-50

  • 图片代号:

    E-44

  • vtest:

    80

  • htest:

    999900

  • atest:

    15

  • wtest:

    125

产品属性

  • 产品编号:

    STS

  • 制造商:

    3M

  • 类别:

    电缆,电线 - 管理 > 标记物

  • 系列:

    STS

  • 包装:

  • 类型:

    导线标记

  • 尺寸:

    0.75" 宽 x 1.40" 长(19.1mm x 35.6mm)

  • 电缆直径:

    0.090" ~ 0.315"(2.29mm ~ 8.00mm)

  • 图例:

    空白

  • 颜色:

    白色

  • 材料:

    乙烯基

  • 描述:

    WIRE MARKER 19.1MM X 35.6MM WHT

供应商型号品牌批号封装库存备注价格
BOURNS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
STMicroelectronics
23+
16-QFN(3x3)
66800
原装正品现货
询价
S
2019
SO8
55000
绝对原装正品假一罚十!
询价
SAMHOP
22+
SOT23-6
2730
公司原装现货
询价
ST
10+
SOP-8
7800
全新原装正品,现货销售
询价
STM
23+
N/A
19526
询价
ST/意法半导体
2023+
8-SOIC
6000
全新原装深圳仓库现货有单必成
询价
ST
22+
35000
OEM工厂,中国区10年优质供应商!
询价
ST-意法半导体
24+25+/26+27+
SOP-8.贴片
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
ST/意法
SOP8
6698
询价
更多STS供应商 更新时间2024-5-15 10:30:00