丝印：25G3L；Package：SO-8；N-channel 30 V, 0.0025 Ω, 22 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’

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STMICROELECTRONICS

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