| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel4-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel40-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel40-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •SynchronousRectification •PowerSupplies | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N04MDG,NP80N04NDG,andNP80N04PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Superlowon-stateresistance -NP80N04MDG,NP80N04NDG RDS(on)1=4.8mΩMAX.(VGS=10V,ID=40A) R | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel40-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2020+ |
TO-220 |
32630 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
ST |
17+ |
TO-220 |
15000 |
原装现货热卖 |
询价 | ||
ST |
17+ |
TO-220 |
6200 |
询价 | |||
ST |
23+ |
TO-220 |
20000 |
专做原装正品,假一罚百! |
询价 | ||
ST |
TO-220 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
23+ |
TO-220 |
6000 |
原装,可配单 |
询价 | ||
ST |
2315+ |
TO-220 |
3866 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
ST |
06+ |
TO-220 |
10000 |
全新原装 绝对有货 |
询价 | ||
ST |
23+ |
TO220 |
7374 |
只做原装 欢迎咨询 |
询价 | ||
ST/意法 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 |
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