首页>NP80N04MDG>规格书详情
NP80N04MDG中文资料瑞萨数据手册PDF规格书
相关芯片规格书
更多- NP80N04KHE-E1-AY
- NP80N04EHE
- NP80N04DHE-S12-AY
- NP80N04EHE-E2-AY
- NP80N04KHE
- NP80N04EHE-E1-AY
- NP80N04DHE
- NP80N04KHE-E2-AY
- NP80N04KHE
- NP80N04EHE-E1-AY
- NP80N04EHE_15
- NP80N04EHE-E1-AYNote1,2
- NP80N04EHE-E2-AYNote1,2
- NP80N04KHE-E2-AYNote1
- NP80N04KHE-E1-AYNote1
- NP80N04DHE-S12-AYNote1,
- NP80N04KHE
- NP80N04KHE-E1-AY
NP80N04MDG规格书详情
DESCRIPTION
The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Logic level
• Super low on-state resistance
- NP80N04MDG, NP80N04NDG
RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N04PDG
RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±80 A
• Low input capacitance
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
产品属性
- 型号:
NP80N04MDG
- 制造商:
RENESAS
- 制造商全称:
Renesas Technology Corp
- 功能描述:
MOS FIELD EFFECT TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
询价 | ||
RENESAS/瑞萨 |
23+ |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
RENESAS/瑞萨 |
22+ |
TO-220 |
12500 |
瑞萨全系列在售,终端可出样品 |
询价 | ||
NEC |
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
NEC |
6000 |
面议 |
19 |
TO-220AB |
询价 | ||
NEC |
24+ |
TO-220AB |
8866 |
询价 | |||
NEC |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
NEC |
25+ |
TO-TO-220 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
NEC |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 |