零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
80N04 | N-Channel 4 -V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | |||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
N-Channel40-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
N-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
N-Channel40-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •SynchronousRectification •PowerSupplies | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N04MDG,NP80N04NDG,andNP80N04PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Superlowon-stateresistance -NP80N04MDG,NP80N04NDG RDS(on)1=4.8mΩMAX.(VGS=10V,ID=40A) R | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
05+ |
TO-262 |
185 |
询价 | |||
83014498 |
9856 |
TO-220 |
1812 |
只做进口原装现货!假一赔十! |
询价 | ||
23+ |
N/A |
48800 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
P-TO220-3-1 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
N |
23+ |
TO-TO-220 |
23188 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEC |
2020+ |
TO-262 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
N |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
17 |
22+ |
TO-220 |
3750 |
原装现货假一赔十 |
询价 | ||
GOFORD |
2022+ |
TO-251252 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
VB |
P-TO220-3-1 |
608900 |
原包原标签100%进口原装常备现货! |
询价 |
相关规格书
更多- 80N055
- 80N06
- 80N06-10
- 80N07
- 80N08_15
- 80N08G-T47-T
- 80N08G-TA3-R
- 80N08G-TQ2-R
- 80N08L-T47-T
- 80N08L-TA3-T
- 80N08L-TQ2-T
- 80N10F7
- 80N40DG
- 80N4LL
- 80N60B
- 80N70F6
- 80NF10
- 80NF1K0
- 80NF250
- 80NF50K
- 80NFR10
- 80NH0M
- 80NHG000B
- 80NHG000BI
- 80NHG00B-690
- 80NHG00B-690
- 80NHG01B
- 80NHG01BI
- 80NHG02B
- 80NHG02BI
- 80NHG0B
- 80NHG1B-690
- 80NHG1B-690
- 80NHG1BS-690
- 80NHG2BI-690
- 80NHM00BI
- 80NHM1B
- 80NHM1BS-690
- 80NJ1K0
- 80NJ250
- 80NJ50K
- 80NT3
- 80P6
- 80PF120
- 80PF-120
相关库存
更多- 80N06
- 80N06.
- 80N06LG
- 80N08
- 80N08A
- 80N08G-TA3-R
- 80N08G-TA3-T
- 80N08G-TQ2-T
- 80N08L-TA3-R
- 80N08L-TQ2-R
- 80N10
- 80N10L
- 80N40LG
- 80N60A
- 80N70F4
- 80N85T
- 80NF10R
- 80NF1R0
- 80NF4K5
- 80NF70
- 80NH00M
- 80NH1M
- 80NHG000B-400
- 80NHG000BI-400
- 80NHG00B-690
- 80NHG00BI-690
- 80NHG01B-40
- 80NHG01BI-400
- 80NHG02B-400
- 80NHG02BI-400
- 80NHG0B-690
- 80NHG1B-690
- 80NHG1BI-690
- 80NHG2B-690
- 80NHM00B
- 80NHM0B
- 80NHM1BI
- 80NJ10R
- 80NJ1R0
- 80NJ4K5
- 80NJR10
- 80NZ03
- 80P6S
- 80PF120
- 80PF120W