N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

文件：472.69 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：337.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.014Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.53 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

文件：472.69 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom

文件：227.75 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.023Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.52 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.011Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.64 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL CLAMPED 10mohm - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest

文件：91.89 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY??MOSFET

Description This fully clamped Power MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the

文件：292.35 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

Description This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest

文件：249.95 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体