Super high dense cell design for extremely low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：126.17 Kbytes 页数：7 Pages

Samhop

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：128.039 Kbytes 页数：7 Pages

Samhop

三合微科

N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package

Features • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100 avalanche tested Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 t

文件：228.22 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 128 m typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Features • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100 avalanche tested • Zener-protected Description This N-channel Power MOSFET is based on the most innovative super-ju

文件：225.58 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：65N150M9；Package：TO-220；N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced

文件：233.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced

文件：233.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：P65NF06；Package：TO-220；N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

文件：335.78 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1

文件：324.77 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.78 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.7 Kbytes 页数：2 Pages

ISC

无锡固电