N-channel 650 V, 128 m typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Features • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100 avalanche tested • Zener-protected Description This N-channel Power MOSFET is based on the most innovative super-ju

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STMICROELECTRONICS

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丝印：65N150M9；Package：TO-220；N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced

文件：233.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

该N沟道功率MOSFET基于创新超结MDmesh M9技术，该技术适用于单位面积导通电阻RDS(on)非常低的中/高电压MOSFET。基于硅的M9技术采用多漏制造工艺，支持增强型器件结构。在所有硅基快速开关超结功率MOSFET中，运用此工艺制造的产品具有较低的导通电阻并降低了栅极电荷值，特别适合需要超高功率密度和出色效率的应用。 • 品质因数RDS(on)*Qg在硅基器件中非常出色 \n• 更高的VDSS额定值 \n• 更高的dv/dt性能 \n• 出色的开关性能 \n• 易于驱动 \n• 经过100%雪崩测试 \n• 稳压保护;

ST

意法半导体

N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced

文件：233.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体