N沟道900 V、0.91 Ohm典型值、6 A MDmesh K5功率MOSFET，TO-220封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

丝印：6N90K5；Package：TO-220；N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in a TO-220 package

文件：733.91 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

文件：704.36 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Switching applications

文件：729.35 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体