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STH110N10F7-6数据手册ST中文资料规格书
STH110N10F7-6规格书详情
描述 Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
特性 Features
Among the lowest R
DS(on) on the market
Excellent figure of merit (FoM)
Low C
rss/C
iss ratio for EMI immunity
High avalanche ruggedness
技术参数
- 型号：
STH110N10F7-6
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Tape and Reel
- 功能描述：
MOSFET N-CH 100V 110A H2PAK-6
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO-263 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
24+ |
NA/ |
4250 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
14+ |
TO-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
23+ |
TO-263 |
12700 |
买原装认准中赛美 |
询价 | ||
ST |
24+ |
TO-263 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST |
21+ |
TO-263 |
10000 |
全新原装现货 |
询价 | ||
ST |
21+ |
TO-263 |
10000 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
ST |
TO263 |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ST |
25+23+ |
TO263 |
13942 |
绝对原装正品全新进口深圳现货 |
询价 |
