STGYA120M65DF2中文资料650 V、120 A沟槽栅场截止低损耗M系列IGBT数据手册ST规格书

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

特性 Features

• Maximum junction temperature: TJ = 175 °C
• 6 μs of minimum short-circuit withstand time
• VCE(sat) = 1.65 V (typ.) @ IC = 120 A
• Tight parameter distribution
• Safer paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Soft- and fast-recovery antiparallel diode

简介

STGYA120M65DF2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGYA120M65DF2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。