Trench gate field-stop IGBT, M series 650 V, 120 A low loss

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意法半导体

650 V、120 A沟槽栅场截止低损耗M系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe • Maximum junction temperature: TJ = 175 °C \n• 6 μs of minimum short-circuit withstand time \n• VCE(sat) = 1.65 V (typ.) @ IC = 120 A \n• Tight parameter distribution \n• Safer paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Soft- and fast-recovery antiparal;

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意法半导体

丝印：G120M65DF2AG；Package：Max247；Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

Features • AEC-Q101 qualified • 6 μs of short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 120 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft and very fast recovery antiparallel diode • Maximum j

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STMICROELECTRONICS

意法半导体

汽车级650 V、120 A沟槽栅场截止M系列低损耗IGBT，Max247长引线封装

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe • AEC-Q101 qualified \n• 6 µs of short-circuit withstand time \n• VCE(sat) = 1.65 V (typ.) @ IC = 120 A \n• Tight parameter distribution \n• Safer paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode \n• Maximum junct;

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意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT

STMICROELECTRONICS

意法半导体