STGYA50H120DF2数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This device is IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特性 Features

• Maximum junction temperature: TJ = 175 °C
• 5 μs of short-circuit withstand time
• Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast recovery antiparallel diode

简介

STGYA50H120DF2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGYA50H120DF2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。