丝印：200N55F3；Package：H2PAK；N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET

Features ■ Ultra low on-resistance ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching perf

文件：483.88 Kbytes 页数：11 Pages

STMICROELECTRONICS

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 75V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.4mΩ(Max)@VGS= 10V APPLICATIONS · Switching applications

文件：330.46 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：260N4LF7；Package：H2PAK-2；N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced tren

文件：598.52 Kbytes 页数：17 Pages

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丝印：260N4LF7；Package：H2PAK-6；N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced tren

文件：598.52 Kbytes 页数：17 Pages

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N-channel 60 V, 1.7 m廓 typ., 180 A STripFET??VI DeepGATE??Power MOSFET in H짼PAK-2 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ■ Low gate charge ■ Very low on-resistance ■ High avalanche ru

文件：730.79 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel Power MOSFET

FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.4mΩ(Max)@VGS= 10V APPLICATIONS ·Switching applications ·Power tools ·Motor control

文件：389.88 Kbytes 页数：4 Pages

ISC

无锡固电

丝印：272N6F7；Package：H2PAK-6；Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power

文件：808.94 Kbytes 页数：15 Pages

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Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vert

文件：440.23 Kbytes 页数：14 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 24 V, 0.95 typ., 180 A

Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. Features • Designed for automotive applications

文件：1.04363 Mbytes 页数：15 Pages

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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

文件：326.58 Kbytes 页数：7 Pages

STMICROELECTRONICS

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