isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.87 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.92 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH C

文件：124.7 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：45.09 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：45.09 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.69 Kbytes 页数：2 Pages

ISC

无锡固电

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggednessand superior switching performance. ■ TYPICAL RDs(0

文件：134.21 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggednessand superior switching performance. ■ TYPICAL RDs(0

文件：134.21 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

文件：311.87 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

文件：311.87 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：90N55F4；Package：H2PAK；N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Applications ■ Switching applications Description The device is N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is

文件：768.43 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体