丝印：90N55F4；Package：H2PAK；N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Applications ■ Switching applications Description The device is N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is

文件：768.43 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：1.28926 Mbytes 页数：7 Pages

VBSEMI

微碧半导体