Low-power, high-sensitivity infrared sensor for presence and motion detection

Features Key features • High-sensitivity, infrared presence and motion sensor • Reach up to 4 meters without lens for objects of 70 x 25 cm² and up to 6 meters for assumable human body size • Integrated silicon IR filter • SMD friendly • Capable of detecting stationary objects • Capable of

文件：1.10475 Mbytes 页数：13 Pages

STMICROELECTRONICS

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IEEE 802.3af PoE Powered Device (PD) interface controller with integrated signature resistor

Summary description The STHS4257 is an IEEE802.3af-compliant family of interface controllers for Power over Ethernet (PoE) Powered Device (PD) applications. The devices consist of two main sections: ● The IEEE802.3af interface to the PoE powered RJ-45 wall socket, and ● the Hot Swap Controller

文件：197.19 Kbytes 页数：18 Pages

STMICROELECTRONICS

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IEEE 802.3af PoE Powered Device (PD) interface controller with integrated signature resistor

Summary description The STHS4257 is an IEEE802.3af-compliant family of interface controllers for Power over Ethernet (PoE) Powered Device (PD) applications. The devices consist of two main sections: ● The IEEE802.3af interface to the PoE powered RJ-45 wall socket, and ● the Hot Swap Controller

文件：197.19 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

IEEE 802.3af PoE Powered Device (PD) interface controller with integrated signature resistor

Summary description The STHS4257 is an IEEE802.3af-compliant family of interface controllers for Power over Ethernet (PoE) Powered Device (PD) applications. The devices consist of two main sections: ● The IEEE802.3af interface to the PoE powered RJ-45 wall socket, and ● the Hot Swap Controller

文件：197.19 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

IEEE 802.3af PoE Powered Device (PD) interface controller with integrated signature resistor

Summary description The STHS4257 is an IEEE802.3af-compliant family of interface controllers for Power over Ethernet (PoE) Powered Device (PD) applications. The devices consist of two main sections: ● The IEEE802.3af interface to the PoE powered RJ-45 wall socket, and ● the Hot Swap Controller

文件：197.19 Kbytes 页数：18 Pages

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Automotive-grade N-channel 650 V, 83 m typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) x area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving sou

文件：658.79 Kbytes 页数：15 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current –ID= 2.6A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive · DC-DC converter · Power switch · Solenoid drive

文件：319.06 Kbytes 页数：2 Pages

ISC

无锡固电

16 channel ±100 V, ±2/±4 A, 5/3 level with RTZ, T/R switch, high-speed ultrasound pulser with integrated transmit beamformer

Features • 0 to 200 V peak-to-peak output signal • Up to 30 MHz operating frequency • Gate driver self-biased architecture; no filtering capacitors required • Pulsed wave (PW) mode operation: – 5/3 level output – ±2 A / ±4 A source and sink current • Continuous wave (CW) mode operation: –

文件：1.39507 Mbytes 页数：4 Pages

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64-channel (±100 V / -200 to 0 V / 0 to 200 V), low harmonic distortion, high voltage analog independent switches

Features • 200 V peak-to-peak input and output signal • Three different operating ranges: – From -100 V to +100 V – From 0 V to 200 V – From -200 V to 0 V • Very fast input slew rate (40 V/ns without load) • Only +3.3 V low voltage supply • Rail-to-rail input signal • Low on-resistance •

文件：2.59118 Mbytes 页数：3 Pages

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Quad ± 90 V, ± 2 A, 3/5 level, ESD-enhanced high-speed ultrasound pulser

Features  Pinout compatibility with STHV748  Recirculation current protection  0 to ±90 V output voltage  Up to 20 MHz operating frequency  Embedded low-power, floating high-voltage drivers (external voltage rails can be also used)  Mode operations:  3/5-level output waveform  ±2 A

文件：280.35 Kbytes 页数：5 Pages

STMICROELECTRONICS

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