Automotive-grade N-channel 650 V, 83 m typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) x area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving sou

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Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • AEC-Q101 qualified \n• Fast-recovery body diode \n• Lower RDS(on) x area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely dv/dt ruggedness \n• Zener-protected \n• Excellent switching performance thanks to the extra driving sou;

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Automotive-grade N-channel 650 V, 83 m typ., 37 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

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Automotive-grade N-channel 650 V, 89 m typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package

Features • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (DBC) substrate • Low thermal resistance • Isolation rating of 3.4 kVrms/min Description This

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