Automotive-grade N-channel 650 V, 89 m typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package

Features • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (DBC) substrate • Low thermal resistance • Isolation rating of 3.4 kVrms/min Description This

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Automotive-grade N-channel 650 V, 89 mOhm typ., 32 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package

This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The • AQG 324 qualified \n• Half-bridge power module \n• 650 V blocking voltage \n• Fast recovery body diode \n• Very low switching energies \n• Low package inductance \n• Dice on direct bond copper (DBC) substrate \n• Low thermal resistance \n• Isolation rating of 3.4 kVrms/min;

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：AUTOMOTIVE-GRADE N-CHANNEL 650 V

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Automotive-grade N-channel 650 V, 83 m typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) x area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving sou

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Automotive-grade N-channel 650 V, 83 m typ., 37 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

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