SH32N65DM6AG中文资料Automotive-grade N-channel 650 V, 89 mOhm typ., 32 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package数据手册ST规格书

描述 Description

This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.

特性 Features

• AQG 324 qualified
• Half-bridge power module
• 650 V blocking voltage
• Fast recovery body diode
• Very low switching energies
• Low package inductance
• Dice on direct bond copper (DBC) substrate
• Low thermal resistance
• Isolation rating of 3.4 kVrms/min

简介

SH32N65DM6AG属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的SH32N65DM6AG晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。