High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes 页数：4 Pages

TELEDYNE

华特力科

D-Band Spectrum Analyzer Harmonic Mixer, Common LO/IF Port

Description: Model STH-06SF-S1 is a D Band harmonic mixer employing single diode and broadband circuitry to deliver low conversion loss and continuous frequency coverage for full waveguide band operations covering the frequency range of 110 to 170 GHz. The mixer extends the operation frequency of

文件：240.78 Kbytes 页数：3 Pages

ERAVANT

F-Band Spectrum Analyzer Harmonic Mixer, Common LO/IF Port

Description: Model STH-08SF-S1 is a F Band harmonic mixer employing single diode and broadband circuitry to deliver low conversion loss and continuous frequency coverage for full waveguide band operations covering the frequency range of 90 to 140 GHz. The mixer extends the operation frequency of

文件：257.67 Kbytes 页数：2 Pages

ERAVANT

NPN Plastic Power Transistor

NPN Plastic Power Transistor Low frequency power amplifier

文件：184.75 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)

• HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY APPLICATIONS: • AUTOMOTIVE IGNITION • DRIVERS FOR SOLENOIDS AND RELAYS N-channel High Injection POWER MOS transis- tors (IGBT) which features a high impedance in- sulated gate input and a low on-resistance characteristi

文件：291.08 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

丝印：10N80K5；Package：H2PAK-2；Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H²PAK-2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technolo

文件：424.56 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：243.05 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.6 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.07 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：243.05 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体