N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100C ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLI

文件：246.11 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.75 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED

文件：202.72 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.75 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED

文件：202.72 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.8 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION APPLICAT

文件：138.86 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.4A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.73 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.62 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 1.45 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ GATE CHARGE MINIMISED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SW

文件：76.15 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH C

文件：122.06 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL Ros(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CU

文件：154.22 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.75 Kbytes 页数：2 Pages

ISC

无锡固电