STH6NA80FI

N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N-CHANNEL800V-1.8Ω-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

H6NA80FI

N-CHANNEL800V-1.8ohm-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR

N-CHANNEL800V-1.8Ω-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

STB6NA80

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

TYPICALRDS(on)=1.68Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEI2PAK(TO-262)POWERPACKAGEINTUBE(SUFFIX”-1”) ■SURFACE-M

STP6NA80

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

STP6NA80

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRos(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRos(

STP6NA80FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRos(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRos(

STP6NA80FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

STW6NA80

N-CHANNEL800V-1.8ohm-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR

N-CHANNEL800V-1.8Ω-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT