isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

文件：326.58 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

丝印：36N60DM6；Package：H2PAK-7；Automotive-grade N-channel 600 V, 0.084 Ω typ., 29 A MDmesh™ DM6 Power MOSFET in an H²PAK-7 package

Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in

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STMICROELECTRONICS

意法半导体

丝印：H3N150；Package：H2PAK-2；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

文件：677.14 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmeshTM DM6 Power MOSFET in an H2PAK-2 package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

文件：642.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

文件：621.23 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

文件：621.23 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

2Megapixel Full HD 32x Network Zoom Camera

Key Features • Max. 2M (1920 x 1080) resolution • 16 : 9 Full HD (1080p) resolution support • 0.15Lux@F1.6 (Color), 0.015Lux@F1.6 (B/W) • 4.44 ~ 142.6mm (32x) optical zoom, 16x digital zoom • H.264, MJPEG dual codec, Multiple streaming • Day & Night (ICR), WDR (120dB) • Intelligent video an

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HANWHAVISION

韩华

1300nm Laser in Coaxial TO-Package

1300nm Laser in Coaxial TO-Package • Designed for application in fiber-optic networks • Laser Diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subcomponent, sim

文件：43.04 Kbytes 页数：3 Pages

SIEMENS

西门子

1300 nm Laser in Coaxial Package with SM-Pigtail, High Power

1300 nm Laser in Coaxial Package with SM-Pigtail, High Power • Designed for application in fiber-optic networks • Laser Diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermeticall

文件：128.83 Kbytes 页数：4 Pages

SIEMENS

西门子