isc N-Channel MOSFET Transistor

FEATURES · Drain Current –ID= 2.6A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive · DC-DC converter · Power switch · Solenoid drive

文件：319.06 Kbytes 页数：2 Pages

ISC

无锡固电

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 100V 2.0A 216 @ VGS=10V 328 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -100V -1.3A 547 @ VGS=-10V 614 @ VGS=-4.5V

文件：140.57 Kbytes 页数：11 Pages

SAMHOP

三合微科

Soldering Tools and Equipment for Electronics Assembly

文件：5.60083 Mbytes 页数：64 Pages

METCAL

HIGH EFFICIENCY ULTRAFAST DIODE

Description The STTH102, which is using ST’s new 200 V planar technology, is specially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Features and benefits ■ Ver

文件：106.23 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体