Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 100V 2.0A 216 @ VGS=10V 328 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -100V -1.3A 547 @ VGS=-10V 614 @ VGS=-4.5V

文件：140.57 Kbytes 页数：11 Pages

SAMHOP

三合微科

Mosfets

Samhop

三合微科

Soldering Tools and Equipment for Electronics Assembly

文件：5.60083 Mbytes 页数：64 Pages

METCAL

HIGH EFFICIENCY ULTRAFAST DIODE

Description The STTH102, which is using ST’s new 200 V planar technology, is specially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Features and benefits ■ Ver

文件：106.23 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH EFFICIENCY ULTRAFAST DIODE

Description The STTH102, which is using ST’s new 200 V planar technology, is specially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Features and benefits ■ Ver

文件：106.23 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体