丝印：I11NM80；Package：I2PAK；N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates th

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STMICROELECTRONICS

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N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in I2PAK

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Ut • Low input capacitance and gate charge\n• Low gate input resistance• Best RDS(on)*Qg in the industry;

ST

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N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET

文件：467.13 Kbytes 页数：17 Pages

STMICROELECTRONICS

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N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET

Description The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low on resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar

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STMICROELECTRONICS

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N-channel 800 V, 0.35 廓, 11 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, TO-247

文件：949.78 Kbytes 页数：17 Pages

STMICROELECTRONICS

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