STI11NM80中文资料意法半导体数据手册PDF规格书
STI11NM80规格书详情
Features
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics'
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST's proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
产品属性
- 型号：
STI11NM80
- 功能描述：
MOSFET N-Ch 800V 0.35 Ohm 11 A MDmesh
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
0826+ |
TO-262 |
4900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
22+ |
TO-262 |
8700 |
原装现货 |
询价 | ||
ST |
23+24 |
TO-262 |
17415 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
询价 | ||
ST/意法 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
23+ |
N |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST |
TO-262 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ADI |
2018+ |
SMD |
20 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
ST/意法 |
2022 |
TO-262 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268994邹小姐 |
询价 | ||
ST/进口原 |
17+ |
TO-262 |
6200 |
询价 |
