丝印：200N55F3；Package：H2PAK；N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET

Features ■ Ultra low on-resistance ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching perf

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STMICROELECTRONICS

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丝印：200N55F3；Package：PowerSO-10；N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10 STripFET™ Power MOSFET

Description This n-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET™ process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Features ■ Conduction losses reduced ■

文件：491.83 Kbytes 页数：12 Pages

STMICROELECTRONICS

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