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Marking：200N55F3；Package：H2PAK；N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET Features ■Ultralowon-resistance ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET™IIIPowerMOSFETtechnologyis amongthelatestimprovements,whichhavebeen especiallytailoredtominimizeon-stateresistance providingsuperiorswitchingperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：200N55F3；Package：PowerSO-10；N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10 STripFET™ Power MOSFET Description Thisn-channelenhancementmodePower MOSFETisthelatestrefinementofST’s STripFET™process.Theresultingtransistor showsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsand lowgatecharge. Features ■Conductionlossesreduced ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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