STGWA20IH65DF中文资料Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO-247 long leads package数据手册ST规格书

描述 Description

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

特性 Features

• Designed for soft-commutation
• Maximum junction temperature: TJ = 175 °C
• VCE(sat) = 1.55 V (typ.) @ IC = 20 A
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Low drop voltage freewheeling co-packaged diode
• Positive VCE(sat) temperature coefficient

简介

STGWA20IH65DF属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGWA20IH65DF晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。