Gate charge minimized

文件：1.59505 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：128.039 Kbytes 页数：7 Pages

SAMHOP

三合微科

N-Channel MOSFET uses advanced trench technology

文件：1.48659 Mbytes 页数：5 Pages

DOINGTER

杜因特

Gate charge minimized

文件：1.59505 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体