STD25NF10LT4

N-channel 100V - 0.030Ohm - 25A - DPAK Low gate charge STripFET II Power MOSFET

DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomand

STD25NF20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=125mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

STD25P03L

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designedforlowvoltage,highspeedswitchingapplicationsandto withstandhighenergyintheavalancheandcommutationmodes. Thesourceïtoïdraindioderecoverytimeiscomparabletoadiscrete fastrecoverydiode. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqu

STD25P03LT4G

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designedforlowvoltage,highspeedswitchingapplicationsandto withstandhighenergyintheavalancheandcommutationmodes. Thesourceïtoïdraindioderecoverytimeiscomparabletoadiscrete fastrecoverydiode. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqu

STD2640NL

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

STD27N3LH5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.02Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STD2805

Low voltage fast-switching PNP power transistor

Description ThedeviceismanufacturedinPNPPlanartechnologybyusinga“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■Highcurrentgaincharacteri

STD2805

isc Silicon PNP Power Transistor

DESCRIPTION •LowCollector-EmitterSaturationVoltage- :VCE(sat)=-0.6V(Max)(IC=-5A;IB=-0.25A) •DCCurrentGain-hFE=85(Min)@IC=-5A •Fast-Switchingspeed •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •CCFLdirvers •V

STD2805-1

Low voltage fast-switching PNP power transistor

Description ThedeviceismanufacturedinPNPPlanartechnologybyusinga“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■Highcurrentgaincharacteri

STD2805T4

Low voltage fast-switching PNP power transistor

Description ThedeviceismanufacturedinPNPPlanartechnologybyusinga“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■Highcurrentgaincharacteri