N-channel 100V - 0.030Ohm - 25A - DPAK Low gate charge STripFET II Power MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and

文件：432.72 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：318.44 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The sourceïtoïdrain diode recovery time is comparable to a discrete fast recovery diode. Features • S Prefix for Automotive and Other Applications Requiring Uniqu

文件：234.31 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The sourceïtoïdrain diode recovery time is comparable to a discrete fast recovery diode. Features • S Prefix for Automotive and Other Applications Requiring Uniqu

文件：234.31 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：895.58 Kbytes 页数：8 Pages

SAMHOP

三合微科

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=27A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.02Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.73 Kbytes 页数：2 Pages

ISC

无锡固电

Low voltage fast-switching PNP power transistor

Description The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteri

文件：149.29 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)( IC= -5A; IB= -0.25A) • DC Current Gain -hFE = 85(Min)@ IC= -5A • Fast -Switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • CCFL dirvers • V

文件：265.8 Kbytes 页数：3 Pages

ISC

无锡固电

Low voltage fast-switching PNP power transistor

Description The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteri

文件：149.29 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching PNP power transistor

Description The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteri

文件：149.29 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体