isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)( IC= -5A; IB= -0.25A) • DC Current Gain -hFE = 85(Min)@ IC= -5A • Fast -Switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • CCFL dirvers • V

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ISC

无锡固电

Low voltage fast-switching PNP power transistor

Description The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteri

文件：149.29 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching PNP power transistor

• Very low collector to emitter saturation voltage\n• Fast-switching speed\n• High current gain characteristic• Through-hole IPAK (TO-251) power package in tube (suffix “-1”)\n• Surface-mounting DPAK (TO-252) power package in tape& reel (suffix “T4);

ST

意法半导体

Low voltage fast-switching PNP power transistor

Description The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteri

文件：149.29 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching PNP power transistor

Description The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteri

文件：149.29 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

低压快速切换PNP功率晶体管

The device is manufactured in PNP planar technology using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. • Very low collector-emitter saturation voltage \n• High current gain characteristic \n• Fast-switching speed;

ST

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 5A DPAK

STMICROELECTRONICS

意法半导体