STD2455PLS

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

STD2555NL

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

STD25N03L

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

STD25N10F7

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features •Ultralowon-resistance •100avalanchetested Applications •Switchin

STD25NE03L

N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema

STD25NF10

N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersforTelecomandComputerapp

STD25NF10L

N-CHANNEL 100V - 0.030 ohm - 25A DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomand

STD25NF10LA

N-channel 100 V, 0.030 廓, 25 A DPAK STripFET??II Power MOSFET

Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics’uniqueSTripFETprocess,whichisspecificallydesignedtominimizeinputcapacitanceandgatecharge.Thisrendersthedevicesuitableforuseasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersfor

STD25NF10LA

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

STD25NF10LA

N-channel Enhancement Mode Power MOSFET

Features VDS=100V,ID=40A RDS(ON)