isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：329.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 0.030 廓, 25 A DPAK STripFET??II Power MOSFET

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for

文件：656.37 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel Enhancement Mode Power MOSFET

Features VDS= 100V, ID= 40 A RDS(ON)

文件：858.34 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel 100-V (D-S) MOSFET

文件：984.89 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N沟道100 V - 0.030 Ohm - 25 A - DPAK StripFET(TM) II功率MOSFET

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • 出色的dv/dt性能 \n• 经过100％雪崩测试 \n• 逻辑电平器件;

ST

意法半导体