STD29NF03L

N-CHANNEL 30V - 0.018 ohm - 29A DPAK LOW GATE CHARGE STripFET POWER MOSFET

DESCRIPTION ThisapplicationspecificPowerMOSFETshowsthebesttrade-offbetweenon-resistanceandgatecharge.Whenusedashighandlowsideinbuckregulators,itgivethebestperformanceintermsofbothconductionandswitchinglosses.Thisisextremelyimportantformotherboardswheref

STD2HNK60Z

N-channel 600V - 4.4廓 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplication. Suchseri

STD2HNK60Z-1

N-CHANNEL 600V - 4.4廓 - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplication. Suchseri

STD2HNK60Z-1

N-channel 600V - 4.4廓 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplication. Suchseri

STD2N105K5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=1.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1050V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

STD2N50

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

1.TYPICALRDS(on)=4.5Ω 2.AVALANCHERUGGEDTECHNOLOGY 3.100AVALANCHETESTED

STD2N62K3

N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure. Thesedevicesboastanextremelylowon-resistance,superiordynamicperformanceandhighavalanchecapability,rende

STD2N62K3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STD2N80K5

Marking：2N80K5；Package：DPAK；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STD2NA50

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.25Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEIPAK(TO-251)PO