N-channel 600V - 4.4廓 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such seri

文件：497.26 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08801 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.77775 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-CHANNEL 600V - 4.4廓 - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such seri

文件：405.77 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 4.4廓 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such seri

文件：497.26 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S)Power MOSFET

文件：1.08394 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N沟道600 V、4.4 Ohm、2 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，DPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体

N沟道600 V、4.4 Ohm、2 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，IPAK封装

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/d • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体